---
title: "RF Technology Development… at GlobalFoundries – Essex, VT"
canonical: "https://www.metaintro.com/job/rf-technology-development-engineer-at-globalfoundries-33b04a50-a06a-5ab6-b32e-1ddfc0966e40"
language: "en"
author: "Metaintro"
---

[![GlobalFoundries logo](/api/company-logo?url=https%3A%2F%2Fgf.com%2Fwp-content%2Fthemes%2Fgf-2025%2Ffavicon%2Fapple-touch-icon.png%3Fv%3D2026&sig=EeXWP5iOiJeeQkxoK5qYBfumJnTFyfCO05ZViC_tfug)](/company/globalfoundries)[GlobalFoundries](/company/globalfoundries)
# RF Technology Development Engineer at GlobalFoundries

Department: Manufacturing

Compensation

$85,000 – $146,000/yr

**Setup**
: On-site

**Location**
: Essex, Vermont

**Type**
: Full-time

**Level**
: mid

**Posted**
: Aug 18, 2026

## Description

GlobalFoundries is hiring an RF Integration Engineer to develop, optimize, and qualify FEOL and BEOL semiconductor devices and processes for its RF Technology Development Organization in Essex Junction, Vermont. The role includes design of experiments, process problem solving, device characterization, test methodology development, and collaboration with internal and external customers. Candidates need a relevant master’s or PhD, at least three years of semiconductor processing experience, and experience with silicon or SiGe BiCMOS FEOL or BEOL processing; the expected salary range is $85,000 to $146,000.

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