Description
Micron Technology is hiring a 3D DRAM Process Integration Engineer Intern to support the development of next-generation DRAM technologies, including charge storage devices and thin-film transistors. The intern will design and analyze experiments in an R&D fabrication environment, collaborate with process, design, characterization, reliability, and yield teams, analyze electrical and probe data, and use AI and AI-assisted tools to improve technology development. The role requires a current PhD in a relevant technical field, semiconductor device fabrication and characterization experience, and a strong foundation in device physics and process integration.
