Description
Micron Technology is hiring an Intern DRAM Design Engineer to contribute to the design, analysis, verification, optimization, and validation of digital, analog, and mixed-signal circuits for next-generation memory products. The role supports physical design, simulation, tape-out revisions, manufacturability, and product performance, while also developing AI-assisted software tools and leveraging artificial intelligence to improve design workflows and engineering productivity. Candidates must be pursuing a bachelor's or master's degree in electrical or computer engineering, continue studies through at least Fall 2027, and have relevant coursework, projects, or research experience.
