Description
Infineon is hiring a Lead Principal Engineer, Device Development, RF-GaN to develop and advance RF-GaN/Si device technologies for RF power applications from process concept through production handover. The role involves implementing novel device concepts, optimizing performance and reliability, developing characterization methods, coordinating with project management, process development, characterization, product design, and customers, and collaborating in an international multi-site environment. Candidates need a Master's degree or PhD in Microelectronics, Electrical Engineering, or Physics, more than 10 years of GaN device technology development experience, strong semiconductor physics and technology knowledge, and fluent English communication skills.
