Description
This job posting seeks an experienced individual with 5 to 10 years of experience in memory layout design, specifically focusing on building top-level instances using Memory Compilers. The candidate should possess advanced knowledge of design rule, yield, and reliability considerations, particularly EM-IR, HCI, and NBTI. They must also have direct hands-on experience in transistor, cell, and block-level memory layout design for various FinFET process technologies such as 3nm/5nm/7nm/10nm/14nm. A strong understanding of CMOS semiconductor processes is essential.
