Description
This PhD position at STMicroelectronics involves developing methodologies for analyzing bipolar transistors using the Tomographic Atom Probe (TAP) technique, focusing on both simple layer stacks and real transistors. The research also aims to bridge the gap between TAP and Transmission Electron Microscopy (TEM) by establishing a non-destructive observation protocol for TEM followed by TAP analysis. The project requires expertise in sample preparation and implementation of characterization methods, primarily conducted at the IM2NP Tomographic Atom Probe platform in Marseille.
