Description
Micron is hiring an Advanced DRAM Process Integration Engineer to lead process integration for advanced DRAM technologies, including charge storage devices and thin-film transistors. The role develops memory device architectures from concept through silicon implementation, designs experiments to evaluate performance, variability, reliability, and failure mechanisms, optimizes cross-functional process flows, and drives yield improvement through inline, defect, parametric, and probe data analysis. Candidates need an MS or PhD in a relevant technical field and 7 to 10 years of semiconductor experience in memory technology, process integration, or device development.
