Description
Renesas is hiring a Principal Engineer, GaN Device Engineer to develop Gallium Nitride power devices for high-efficiency power conversion. The role focuses on GaN device physics, charge-trapping mechanisms, device reliability, new device architectures, characterization, data analysis, root-cause investigation, and cross-functional technology development. Candidates should have a Ph.D. or M.S. in Electrical Engineering or a related field, at least 10 years of semiconductor device R&D experience focused on GaN, hands-on characterization and trap-analysis experience, technical leadership, and fluency in English and Chinese; TCAD, reliability modeling, and AEC-Q101 familiarity are preferred. Business travel is required.
