Description
Micron Technology is hiring an HBM Memory Design Engineer for its HBM Architecture Team. The role designs, simulates, optimizes, and floorplans advanced DRAM circuits for next-generation High Bandwidth Memory products, working across digital, analog, and mixed-signal domains. Responsibilities include memory-array and interface design, timing and power analysis, architecture feasibility studies, verification, debug, silicon validation, and collaboration on TSV-based 3D stacking. The position requires a BSEE with 7+ years or MSEE with 5+ years of relevant experience, CMOS and semiconductor-device knowledge, schematic and simulation experience, power-network analysis, and scripting proficiency.
