Description
Renesas is seeking a Medium Voltage Power Trench MOSFET Engineer to define and develop next-generation shielded-gate trench MOSFET technologies. The role involves establishing process modules, analyzing wafer and package performance data, supporting derivative technology and product development, leading yield improvement, and transferring technology to mass production. The position requires a Ph.D. or M.S. in a relevant field, extensive power semiconductor device or process development experience, semiconductor fabrication knowledge, TCAD and simulation skills, and intermediate English and Japanese proficiency.
