Description
Micron Technology is seeking a DRAM Memory Design Engineer to contribute to the design, layout, optimization, verification, and design methodology of DRAM memory arrays and peripheral logic. The role involves using AI-based tools and automation to accelerate schematic optimization, design-space exploration, parasitic analysis, corner coverage, simulation, and silicon learning; managing floor-planning, placement, and routing; and performing circuit-level functional, timing, power, and reliability analysis. Candidates need a master’s degree in electrical or computer engineering, 4–8 years of memory-design experience, CMOS and device-physics fundamentals, and SPICE-based simulation and parasitic-extraction experience.
