Staff Design Engineer, HBM at Micron

Department: HIG

Setup: On-site
Location: Richardson, Texas
Level: staff+
Posted: Aug 16, 2026

Description

Micron Technology is hiring an HBM Memory Design Engineer – Sustaining (Staff) to support the design, verification, and maintenance of High Bandwidth Memory products. The role owns end-to-end silicon, system, and customer issue resolution; supports ECOs and specification changes; improves yield, reliability, and performance; and collaborates with design, product, process integration, packaging, technology development, and system teams. Candidates need 6+ years of experience with a bachelor’s degree or 4+ years with a master’s degree, along with expertise in DRAM/HBM architecture, high-speed memory interfaces, digital or custom design and verification, silicon debug, and post-silicon validation.

Required Skills

DRAM/HBM architecture
High-speed memory interfaces
Digital design
Silicon debug
Post-silicon validation
Python

Additional Information

Minimum Education: Bachelor’s degree in Electrical Engineering, Computer Engineering, or a related field; alternatively, a master’s degree with 4+ years of experience
Required Previous Experiences: 6+ years of experience with a bachelor’s degree or 4+ years with a master’s degree in Electrical Engineering, Computer Engineering, or a related field
Experience in digital and/or custom design and verification
Hands-on experience in silicon debug or post-silicon validation
Preferred Qualifications: Experience with HBM, DDR, LPDDR, or high-speed IO systems
Background in system-level debug and silicon-to-system correlation
Knowledge of timing and margin analysis, signal integrity, and power integrity
Experience with DFT, mBIST, or test-mode debug
Programming or scripting skills, preferably Python, for debug automation
Strong communication skills and ability to work across cross-functional teams