Description
Infineon is hiring a Staff Engineer for GaN Technology Development to advance GaN technology nodes and develop next-generation GaN power platforms. The role owns process blocks end-to-end, including proof of concept, optimization, stability, and performance gains; establishes the Process of Record; plans and executes DOE experiments; performs statistical analysis; and supports root-cause investigations. Candidates need a technical university degree in a relevant field, at least three years of relevant industry experience, semiconductor device physics knowledge, DOE and statistical analysis experience, and fluent English.
