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Staff Memory Design Engineer, HBM at Micron

Department: HIG

Setup
On-site
Location
Richardson, Texas
Level
staff+
Posted

Description

Micron Technology is hiring a Staff Design Engineer to design, simulate, optimize, and validate DRAM circuits and digital and analog circuitry for advanced memory products. The role covers CMOS circuit design, floorplanning, layout leadership, circuit simulation, silicon-to-silicon correlation, design documentation, and cross-functional collaboration with global engineering, verification, test, process integration, assembly, and marketing teams. Candidates should have coursework in CMOS, VLSI, and analog circuit design, proficiency with Cadence Virtuoso and simulation tools, and expertise in DRAM subsystem architecture; a BS or MS in Electrical Engineering or a related field plus six years of DRAM design, product, or system experience is preferred.

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