Description
The role leads the definition and development of new III‑V process nodes for InP and GaAs technologies, including epitaxy, lithography, etch, deposition, CMP, implant, and backend steps. It owns process technology transfers to volume manufacturing, collaborates with process, equipment, R&D, quality, and operations teams, and manages external supplier and research partnerships. The position requires a master’s or PhD, 10+ years of semiconductor process engineering or technology development experience, expertise in MOCVD/MBE epitaxy and III‑V device fabrication, and experience with tool evaluations, technology insertion, and supplier joint development. The work is performed in a cleanroom environment with some travel.
